Mfg Part Number: 1DT203L20TDB | NSN : 5962-01-491-2679 | NIIN : 014912679 |
CAGE Code : 61772 | Manufacturer: Integrated Device Technology Inc | Item Name : Microcircuit Memory |
FSC : 5962 Microcircuits Electronic | Description: Microcircuit Memory |
If you are in the market for Microcircuit Memory items, such as nsn part number 1DT203L20TDB, then look no further than Integrated Jet Parts! We currently have this Integrated Device Technology Inc item in stock and it is listed under the NSN 5962-01-491-2679, allowing you to locate it quickly and easily. As such, we invite you to fill out an RFQ form for this component to receive a customized quote within 15 minutes or less. For ease of item identification, nsn part number 1DT203L20TDB with the specific NSN 5962-01-491-2679 can also be found alongside CAGE Code 61772; however, we carry an array of other NSN products, all of which have been sourced from trusted manufacturers like Integrated Device Technology Inc.
At Integrated Jet Parts, we operate with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation, alongside a strict NO CHINA SOURCING pledge to ensure that customers can always rely on the caliber of our offerings. Initiate the purchasing process for nsn part number 1DT203L20TDB from Integrated Device Technology Inc today and see how Integrated Jet Parts can serve as your strategic sourcing partner. For additional inquiries, call or email us directly; we are on standby 24/7x365!
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-491-2679 Item Description: Microcircuit Memory | 5962 | 014912679 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
1dt203l20tdb | 5 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 155.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | RADAR THREAT EMITTER AN/MST-T1; M3P REU-L |
CBBL | FEATURES PROVIDED | HIGH SPEED AND LOW POWER AND ASYNCHRONOUS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS ASYNCHRONOUS FIFO |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 20.00 NANOSECONDS NOMINAL ACCESS |
CZER | MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT |
FEAT | SPECIAL FEATURES | 2,048 X 9-BIT; THIN CERAMIC DIP |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
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